The tunnelling and electron injection reliabilities for FG transistors
نویسندگان
چکیده
منابع مشابه
The tunnelling and electron injection reliabilities for FG transistors
Purpose – The purpose of this paper was to present the results of the three types of FG transistors that were investigated. The reliability issues of oxide thickness due to programming, fabrication defects and process variation may cause leakage currents and thus charge retention failure in the floating gate (FG). Approach – The tunnelling and electron injection methods were applied to program ...
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ژورنال
عنوان ژورنال: Microelectronics International
سال: 2014
ISSN: 1356-5362
DOI: 10.1108/mi-01-2013-0001